Electronic structures of GaAs/AlxGa1-xAs quantum double

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	Electronic structures of GaAs/AlxGa1-xAs quantum double
	Li SS (Li Shu-Shen) ; Xia JB (Xia Jian-Bai)
刊名	nanoscale research letters
	2006
卷号	1 期号:2 页码:167-171
关键词	electronic structures GaAs quantum double rings nanostructures effective-mass theory band mixing
ISSN号	1931-7573
通讯作者	li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: sslee@red.semi.ac.cn
中文摘要	in the framework of effective mass envelope function theory, the electronic structures of gaas/alxga1-xas quantum double rings(qdrs) are studied. our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. in calculations, the effects due to the different effective masses of electrons and holes in gaas and alxga1-xas and the valence band mixing are considered. the energy levels of electrons and holes are calculated for different shapes of qdrs. the calculated results are useful in designing and fabricating the interrelated photoelectric devices. the single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in qdrs.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10232]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS ,Xia JB . Electronic structures of GaAs/AlxGa1-xAs quantum double[J]. nanoscale research letters,2006,1(2):167-171.
APA	Li SS ,&Xia JB .(2006).Electronic structures of GaAs/AlxGa1-xAs quantum double.nanoscale research letters,1(2),167-171.
MLA	Li SS ,et al."Electronic structures of GaAs/AlxGa1-xAs quantum double".nanoscale research letters 1.2(2006):167-171.