Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal
	Ma XT (Ma Xiao-Tao) ; Zheng WH (Zheng Wan-Hua) ; Ren G (Ren Gang) ; Fan ZC (Fan Zhong-Chao) ; Chen CH (Chen Chang-Hui)
刊名	acta physica sinica
	2007
卷号	56 期号:2 页码:977-981
关键词	two-dimensional photonic crystal
ISSN号	issn: 1000-3290
通讯作者	zheng, wh, chinese acad sci, inst semicond, nanooptoelect lab, beijing 100083, peoples r china. 电子邮箱地址: whzheng@red.semi.ac.cn
中文摘要	inductively coupled plasma (icp) etching of inp in cl-2/bcl3 gas mixtures is studied in order to achieve low-damage and high-anisotropy etching of two-dimensional inp/ingaasp photonic crystal. the etching mechanisms are discussed and the effect of plasma heating on wafer during etching is analyzed. it is shown that the balance between the undercut originating from plasma heating and the redeposition of sputtering on the side-wall is crucial for highly anisotropic etching, and the balance point moves toward lower bias when the icp power is increased. high aspect-ratio etching at the dc bias of 203 v is obtained. eventually, photonic crystal structure with nearly 90 degrees side-wall is achieved at low dc bias after optimization of the gas mixture.
学科主题	光电子学
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9678]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ma XT ,Zheng WH ,Ren G ,et al. Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal[J]. acta physica sinica,2007,56(2):977-981.
APA	Ma XT ,Zheng WH ,Ren G ,Fan ZC ,&Chen CH .(2007).Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal.acta physica sinica,56(2),977-981.
MLA	Ma XT ,et al."Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal".acta physica sinica 56.2(2007):977-981.