Study on optical properties of Er/Er+O doped GaN thin films

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	Study on optical properties of Er/Er+O doped GaN thin films
	Song SF (Song Shu-Fan) ; Chen WD (Chen Wei-De) ; Xu ZJ (Xu Zhen-Jia) ; Xu XR (Xu Xu-Rong)
刊名	acta physica sinica
	2007
卷号	56 期号:3 页码:1621-1626
关键词	GaN
ISSN号	issn: 1000-3290
通讯作者	song, sf, beijing jiaotong univ, inst optoelect technol, beijing 100044, peoples r china. 电子邮箱地址: sfsong@center.njtu.edu.cn
中文摘要	we extend the use of raman spectroscopy to investigate the modes of er-implanted and er + o co-implanted gan, and discuss the influence of o ions on er3+ -related infrared photoluminescence (pl). it is found that er3+ implantation introduces new raman peaks in raman spectra at frequencies 300 and 670 cm and one additional new peak at 360cm is introduced after er + o implantation. it is proposed that the broad structure around 300 cm(-1) mode originates from disorder-activated scattering (dars). the raman peak at 670 cm is assigned to nitrogen vacancy related defects. the 360 cm peak is attributed to the o implantation induced defect complexes (vacancies, interstitial, or anti-sites in the host). the appearance of the 360 cm(-1) mode results in the decrease of the er3+ -related infrared pl of gan: er + o.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9586]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song SF ,Chen WD ,Xu ZJ ,et al. Study on optical properties of Er/Er+O doped GaN thin films[J]. acta physica sinica,2007,56(3):1621-1626.
APA	Song SF ,Chen WD ,Xu ZJ ,&Xu XR .(2007).Study on optical properties of Er/Er+O doped GaN thin films.acta physica sinica,56(3),1621-1626.
MLA	Song SF ,et al."Study on optical properties of Er/Er+O doped GaN thin films".acta physica sinica 56.3(2007):1621-1626.