Effect of growth conditions on the GaN thin film by sputtering deposition

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	Effect of growth conditions on the GaN thin film by sputtering deposition
	Zhang CG ; Bian LF ; Chen WD ; Hsu CC
刊名	journal of crystal growth
	2007
卷号	299 期号:2 页码:268-271
关键词	phase equilibria
ISSN号	issn: 0022-0248
通讯作者	zhang, cg, chinese acad sci, inst semicond, state key lab surf phys, beijing 100083, peoples r china. 电子邮箱地址: zhangcg@semi.ac.cn
中文摘要	the phase transition between thermodynamically stable hexagonal wurtzite (h-wz) gallium nitride (gan) and metastable cubic zinc-blende (c-zb) gan during growth by radio-frequency planar magnetron sputtering is studied. gan films grown on substrates with lower mismatches tend to have a h-wz structure, but when grown on substrates with higher mismatches, a c-zb structure is preferred. gan films grown under high nitrogen pressure also tend to have a h-wz structure, whereas a c-zb structure is preferred when grown under low nitrogen pressure. in addition, low target-power growth not only helps to improve hexagonal gan (h-gan) crystalline quality at high nitrogen pressure on low-mismatch substrates, but also enhances cubic gan (c-gan) quality at low nitrogen pressure on high-mismatch substrates. (c) 2007 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9570]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang CG,Bian LF,Chen WD,et al. Effect of growth conditions on the GaN thin film by sputtering deposition[J]. journal of crystal growth,2007,299(2):268-271.
APA	Zhang CG,Bian LF,Chen WD,&Hsu CC.(2007).Effect of growth conditions on the GaN thin film by sputtering deposition.journal of crystal growth,299(2),268-271.
MLA	Zhang CG,et al."Effect of growth conditions on the GaN thin film by sputtering deposition".journal of crystal growth 299.2(2007):268-271.