Giant and zero electron g factors of dilute nitride semiconductor nanowires

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Giant and zero electron g factors of dilute nitride semiconductor nanowires
	Zhang XW ; Fan WJ ; Li SS ; Xia JB
刊名	applied physics letters
	2007
卷号	90 期号:19 页码:art.no.193111
ISSN号	issn: 0003-6951
通讯作者	zhang, xw, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
中文摘要	the electronic structures and electron g factors of insb1-sns and gaas1-sns nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k.p model. the nitrogen doping has direct and indirect effects on the g factors. a giant g factor with absolute value larger than 900 is found in insb1-sns bulk material. a transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. an electric field tunable zero g factor is found in gaas1-sns nanowires. (c) 2007 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9530]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang XW,Fan WJ,Li SS,et al. Giant and zero electron g factors of dilute nitride semiconductor nanowires[J]. applied physics letters,2007,90(19):art.no.193111.
APA	Zhang XW,Fan WJ,Li SS,&Xia JB.(2007).Giant and zero electron g factors of dilute nitride semiconductor nanowires.applied physics letters,90(19),art.no.193111.
MLA	Zhang XW,et al."Giant and zero electron g factors of dilute nitride semiconductor nanowires".applied physics letters 90.19(2007):art.no.193111.