Effect of heavily doped boron on bandgap narrowing of strained SiGe layers

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	Effect of heavily doped boron on bandgap narrowing of strained SiGe layers
	Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming)
刊名	chinese physics letters
	2007
卷号	24 期号:6 页码:1686-1689
关键词	TRANSISTORS
ISSN号	issn: 0256-307x
通讯作者	yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn
中文摘要	taking into account the compensation effect of b to ge in strained sige layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained sige layers is calculated, and the classical jain-roulston (j-r) model is modified. the results show that our modified j-r model well fits the experimental values. based on the modified j-r model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of sige heterojunction bipolar transistors.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9474]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yao F ,Xue CL ,Cheng BW ,et al. Effect of heavily doped boron on bandgap narrowing of strained SiGe layers[J]. chinese physics letters,2007,24(6):1686-1689.
APA	Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Effect of heavily doped boron on bandgap narrowing of strained SiGe layers.chinese physics letters,24(6),1686-1689.
MLA	Yao F ,et al."Effect of heavily doped boron on bandgap narrowing of strained SiGe layers".chinese physics letters 24.6(2007):1686-1689.