Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model

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	Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model
	Zhang XW ; Fan WJ ; Li SS ; Xia JB
刊名	physical review b
	2007
卷号	75 期号:20 页码:art.no.205331
关键词	INNXSB1-X ALLOYS
ISSN号	issn: 1098-0121
通讯作者	zhang, xw, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
中文摘要	the electronic structures of insb1-xnx nanowires are investigated using the ten-band k center dot p method. it is found that nitrogen increases the rashba coefficient of the nanowires dramatically. for thick nanowires, the rashba coefficient may increase by more than 20 times. the semiconductor-metal transition occurs more easily in insb1-xnx nanowires than in insb nanowires. the electronic structure of insb1-xnx nanowires is very different from that of the bulk material. for fixed x the bulk material is a semimetal, while the nanowires are metal-like. in insb1-xnx bulk material and thick nanowires, an interesting decrease of electron effective mass is observed near k=0 which is induced by the nitrogen, but this phenomenon disappears in thin nanowires.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9404]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang XW,Fan WJ,Li SS,et al. Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model[J]. physical review b,2007,75(20):art.no.205331.
APA	Zhang XW,Fan WJ,Li SS,&Xia JB.(2007).Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model.physical review b,75(20),art.no.205331.
MLA	Zhang XW,et al."Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1-xNx nanowires: Ten-band k center dot p model".physical review b 75.20(2007):art.no.205331.