Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique

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	Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique
	Bao ZH (Bao Zhi-Hua) ; Jing WP (Jing Wei-Ping) ; Luo XD (Luo Xiang-Dong) ; Tan PH (Tan Ping-Heng)
刊名	acta physica sinica
	2007
卷号	56 期号:7 页码:4213-4217
关键词	semi-insulated GaAs
ISSN号	issn: 1000-3290
通讯作者	bao, zh, nantong univ, jiangsu prov key lab asic design, nantong 226007, peoples r china. 电子邮箱地址: luoxd00@yahoo.com.cn
中文摘要	using micro-photoluminescence technique, we observed a new photoluminescence peak about 0.348 ev above the bandgap of gaas (e-0). by analyzing its optical characteristics, we assigned this peak to the nonequilibrium luminescence emission from the e-0 + delta(0) bandgap in semi-insulated gaas, which was further verified by raman results. the observed polarization, excitation power dependence and temperature dependence of the photoluminescence spectra from the e-0 + delta(0) energy level were very similar to those from the e-0 of gaas. this mainly resulted from the common conduction band around gamma(6) that was involved in the two optical transition processes, and indicated that the optical properties of bulk gaas were mainly determined by the intrinsic properties of the conduction band. our results demonstrated that the micro-photoluminescence technique is a powerful tool to investigate the high energy states above the fundamental bandgap in semiconductor materials.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9392]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Bao ZH ,Jing WP ,Luo XD ,et al. Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique[J]. acta physica sinica,2007,56(7):4213-4217.
APA	Bao ZH ,Jing WP ,Luo XD ,&Tan PH .(2007).Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique.acta physica sinica,56(7),4213-4217.
MLA	Bao ZH ,et al."Optical properties of the E-0+Delta(0) energy level higher than the bandgap of GaAs studied by micro-photoluminescence technique".acta physica sinica 56.7(2007):4213-4217.