Influence of level filling on optical properties of quantum well

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	Influence of level filling on optical properties of quantum well
	Zhu, L ; Zheng, HZ ; Tan, PH ; Zhou, X ; Ji, Y ; Yang, FH ; Li, GR ; Zeng, YX
刊名	acta physica sinica
	2004
卷号	53 期号:12 页码:4334-4340
关键词	resonant tunneling
ISSN号	1000-3290
通讯作者	zhu, l, sichuan univ, coll phys sci & technol, chengdu 610064, peoples r china. 电子邮箱地址: zl_pin@sohu.com
中文摘要	in a specially- designed three-barrier-double-well tunneling structure, electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. it was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement stark effect. moreover, at very low bias, a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well, that cannot be explained by the theory of hand-to-hand transition in the framework of single electron picture.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8928]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu, L,Zheng, HZ,Tan, PH,et al. Influence of level filling on optical properties of quantum well[J]. acta physica sinica,2004,53(12):4334-4340.
APA	Zhu, L.,Zheng, HZ.,Tan, PH.,Zhou, X.,Ji, Y.,...&Zeng, YX.(2004).Influence of level filling on optical properties of quantum well.acta physica sinica,53(12),4334-4340.
MLA	Zhu, L,et al."Influence of level filling on optical properties of quantum well".acta physica sinica 53.12(2004):4334-4340.