Photoluminescence pressure coefficients of InAs/GaAs quantum dots

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Photoluminescence pressure coefficients of InAs/GaAs quantum dots
	Luo JW ; Li SS ; Xia JB ; Wang LW
刊名	physical review b
	2005
卷号	71 期号:24 页码:art.no.245315
关键词	ELECTRONIC-STRUCTURE
ISSN号	1098-0121
通讯作者	luo, jw, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lwwang@lbl.gov
中文摘要	we have investigated the ground exciton energy pressure coefficients of self-assembled inas/gaas quantum dots by calculating 21 systems with different quantum dot shape, size, and alloying profile using the atomistic empirical pseudopotential method. our results confirm the experimentally observed significant reductions of the exciton energy pressure coefficients from the bulk values. we show that the nonlinear pressure coefficients of the bulk inas and gaas are responsible for these reductions, and the percentage of the electron wave function on top of gaas atoms is responsible for the variation of this reduction. we also find a pressure coefficient versus exciton energy relationship which agrees quantitatively with the experimental results. we find linear relationships which can be used to get the information of the electron wave functions from exciton energy pressure coefficient measurements.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8650]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo JW,Li SS,Xia JB,et al. Photoluminescence pressure coefficients of InAs/GaAs quantum dots[J]. physical review b,2005,71(24):art.no.245315.
APA	Luo JW,Li SS,Xia JB,&Wang LW.(2005).Photoluminescence pressure coefficients of InAs/GaAs quantum dots.physical review b,71(24),art.no.245315.
MLA	Luo JW,et al."Photoluminescence pressure coefficients of InAs/GaAs quantum dots".physical review b 71.24(2005):art.no.245315.