Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

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	Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts
	Luo Q ; Du JF ; Yang MH ; Wang LC ; Jin T ; Yu Q
刊名	semiconductor science and technology
	2005
卷号	20 期号:6 页码:606-610
关键词	OHMIC CONTACTS
ISSN号	0268-1242
通讯作者	luo, q, univ elect sci & technol china, sch microelect & solid state elect, chengdu 610054, sichuan, peoples r china.
中文摘要	a new measurement method for gan films and their schottky contacts is reported in this paper. instead of the fabrication of ohmic contacts, this measurement is based on a special back-to-back schottky diode that has a rectifying character. a mathematical model indicates that the electronic parameters of the materials can be deduced from the device's i-v data. in the experiment of an unintentionally doped n-type gan layer with a residual carrier density 7 x 10(16) cm(-3), the analysis by the new method gives the layer's sheet resistance rho(s) = 497 omega, the electron mobility mu(n) =, 613 cm(2) v-1 s(-1) and the ideality factor of the ni/au-gan schottky contacts n = 2.5, which are close to the data obtained by the traditional measurements: rho(s) = 505 omega, mu(n) = 585 cm(2) v-1 s(-1) and n = 3.0. the method reported can be adopted not only for gan films but also for other semiconductor materials, especially in the cases where ohmic contacts of high quality are hard to make or their fabricating process affects the film's character.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8648]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo Q,Du JF,Yang MH,et al. Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts[J]. semiconductor science and technology,2005,20(6):606-610.
APA	Luo Q,Du JF,Yang MH,Wang LC,Jin T,&Yu Q.(2005).Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts.semiconductor science and technology,20(6),606-610.
MLA	Luo Q,et al."Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts".semiconductor science and technology 20.6(2005):606-610.