Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation
	Zheng ZS ; Liu ZL ; Zhang GQ ; Li N ; Li GH ; Ma HZ ; Zhang EX ; Zhang ZX ; Wang X
刊名	semiconductor science and technology
	2005
卷号	20 期号:6 页码:481-484
关键词	OXIDES
ISSN号	0268-1242
通讯作者	zheng, zs, chinese acad sci, inst semicond, microelect r&d ctr, beijing 100083, peoples r china. 电子邮箱地址: zszheng@red.semi.ac.cn
中文摘要	an investigation of hardening the buried oxides (box) in separation by implanted oxygen (simox) silicon-on-insulator (soi) wafers to total-dose irradiation has been made by implanting nitrogen into the box layers with a constant dose at different implantation energies. the total-dose radiation hardness of the box layers is characterized by the high frequency capacitance-voltage (c-v) technique. the experimental results show that the implantation of nitrogen into the box layers can increase the box hardness to total-dose irradiation. particularly, the implantation energy of nitrogen ions plays an important role in improving the radiation hardness of the box layers. the optimized implantation energy being used for a nitrogen dose, the hardness of box can be considerably improved. in addition, the c-v results show that there are differences between the box capacitances due to the different nitrogen implantation energies.
学科主题	微电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8644]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng ZS,Liu ZL,Zhang GQ,et al. Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation[J]. semiconductor science and technology,2005,20(6):481-484.
APA	Zheng ZS.,Liu ZL.,Zhang GQ.,Li N.,Li GH.,...&Wang X.(2005).Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation.semiconductor science and technology,20(6),481-484.
MLA	Zheng ZS,et al."Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation".semiconductor science and technology 20.6(2005):481-484.