Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature
	Wang YG ; Ma XY ; Fan YX ; Wang HT
刊名	applied optics
	2005
卷号	44 期号:20 页码:4384-4387
关键词	PUMPED ND-GDVO4 LASER
ISSN号	0003-6935
通讯作者	wang, yg, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: chinawygxjw@163.com
中文摘要	we have demonstrated stable self-starting passive mode locking in a diode-end-pumped nd:gd-0.8-y0.5vo4 laser by using an in0.25ga0.75as absorber grown at low temperature (lt in0.25ga0.75as absorber). an in0.25ga0.75as single-quantum-well absorber, which was grown directly on the gaas buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. continuous-wave mode-locked pulses were obtained at 1063.5 nm. we achieved a pulse duration of 2.6 ps and an average output power of 2.15 w at a repetition rate of 96.4 mhz. (c) 2005 optical society of america.
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8642]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YG,Ma XY,Fan YX,et al. Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature[J]. applied optics,2005,44(20):4384-4387.
APA	Wang YG,Ma XY,Fan YX,&Wang HT.(2005).Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature.applied optics,44(20),4384-4387.
MLA	Wang YG,et al."Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature".applied optics 44.20(2005):4384-4387.