Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser

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	Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser
	Guo, Y ; Liu, FQ ; Liu, JQ ; Li, CM ; Wang, ZG
刊名	materials letters
	2005
卷号	59 期号:22 页码:2755-2758
关键词	heteroepitaxial structure
ISSN号	0167-577x
通讯作者	liu, fq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: fqliu@red.semi.ac.cn
中文摘要	the route to grow inp-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. optimized growth conditions including substrate temperature, v/iii ratio, growth rates, doping levels and interface control are summarized. double crystal xray diffraction and cross-sectional transmission electron microscopy disclose that our grown inp-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8628]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Guo, Y,Liu, FQ,Liu, JQ,et al. Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser[J]. materials letters,2005,59(22):2755-2758.
APA	Guo, Y,Liu, FQ,Liu, JQ,Li, CM,&Wang, ZG.(2005).Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser.materials letters,59(22),2755-2758.
MLA	Guo, Y,et al."Growth of a periodic InP-based heteroepitaxial structure for a quantum cascade laser".materials letters 59.22(2005):2755-2758.