Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition

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	Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition
	Lu LW ; Chen TJ ; Shen B ; Wang JN ; Ge WK
刊名	chinese physics letters
	2005
卷号	22 期号:8 页码:2081-2083
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0256-307x
通讯作者	lu, lw, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lwlu@red.semi.ac.cn
中文摘要	based on the results of the temperature-dependent photoluminescence (pl) measurements, the broad pl emission in the phase-separated ganp alloys with p compositions of 0.03, 0.07, and 0.15 has investigated. the broad pl peaks at 2.18, 2.12 and 1.83 ev are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. with the increasing p composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80-160mev) of the pl peak energy and the trend of the red shift is strengthened. no pl emission peak is observed from the gan-rich ganp region, suggesting that the photogenerated carriers in the gan-rich ganp region may recombine with each other via non-radiation transitions.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8598]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Chen TJ,Shen B,et al. Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition[J]. chinese physics letters,2005,22(8):2081-2083.
APA	Lu LW,Chen TJ,Shen B,Wang JN,&Ge WK.(2005).Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition.chinese physics letters,22(8),2081-2083.
MLA	Lu LW,et al."Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition".chinese physics letters 22.8(2005):2081-2083.