Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

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	Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE
	Pan JQ
刊名	semiconductor science and technology
	2005
卷号	20 期号:10 页码:1083-1086
关键词	VAPOR-PHASE EPITAXY
ISSN号	0268-1242
通讯作者	feng, w, chinese acad sci, inst semicond, optoelect res & dev ctr, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wfeng@semi.ac.cn
中文摘要	narrow stripe selective movpe has been used to grow high quality oxide-free ingaalas layers on an inp substrate patterned with sio2 masks at optimized growth conditions. mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. for the narrow stripe selectively grown ingaalas layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (pl) intensity of more than 80% and a pl full width at half maximum (fwhm) of less than 60 mev are obtained simultaneously with a small mask width variation from 0 to 40 mu m. the characteristics of the thickness enhancement ratio and the pl spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8430]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan JQ. Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE[J]. semiconductor science and technology,2005,20(10):1083-1086.
APA	Pan JQ.(2005).Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE.semiconductor science and technology,20(10),1083-1086.
MLA	Pan JQ."Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE".semiconductor science and technology 20.10(2005):1083-1086.