Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m

	Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m
	Tian, ZB ; Gu, Y ; Wang, K ; Zhang, YG（重点实验室）
刊名	CHINESE PHYSICS LETTERS
	2008
卷号	25 期号:6 页码:2292-2295
关键词	Physics Multidisciplinary
ISSN号	0256-307X
学科主题	Physics
收录类别	SCI
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115341]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Tian, ZB,Gu, Y,Wang, K,et al. Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m[J]. CHINESE PHYSICS LETTERS,2008,25(6):2292-2295.
APA	Tian, ZB,Gu, Y,Wang, K,&Zhang, YG.(2008).Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m.CHINESE PHYSICS LETTERS,25(6),2292-2295.
MLA	Tian, ZB,et al."Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 mu m".CHINESE PHYSICS LETTERS 25.6(2008):2292-2295.