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	Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells
	Bian LF ; Jiang D ; Liang XG ; Lu SL
刊名	chinese physics letters
	2004
卷号	21期号:3页码:548-551
关键词	MOLECULAR-BEAM EPITAXY
ISSN号	0256-307x
通讯作者	bian, lf, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lfbian@red.semi.ac.cn
中文摘要	photoluminescence (pl) spectra of the gainnas/gaas single quantum well (sqw) with different n compositions are carefully studied in a range of temperatures and excitation power densities. the anomalous s-shape temperature dependence of the pl peak is analysed based on the competition and switching-over between the peaks related to n-induced localized states and the peak related to interband excitonic recombination. it is found that with increasing n composition, the localized energy increases and the turning point of the s-shape temperature dependence occurs at higher temperature, where the localized carriers in the bandtail states obtain enough thermal activation energy to be dissociated and delocalized. the rapid thermal annealing (rta) effectively reduces the localized energy and causes a decrease of the switching-over temperature.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8152]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Bian LF,Jiang D,Liang XG,et al. Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells[J]. chinese physics letters,2004,21(3):548-551.
APA	Bian LF,Jiang D,Liang XG,&Lu SL.(2004).Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells.chinese physics letters,21(3),548-551.
MLA	Bian LF,et al."Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells".chinese physics letters 21.3(2004):548-551.

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