Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells

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	Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells
	Liu JP ; Jin RQ ; Zhu JJ ; Zhang JC ; Wang JF ; Wu M ; Chen J ; Wang YT ; Yang H
刊名	journal of crystal growth
	2004
卷号	264 期号:1-3 页码:53-57
关键词	high-resolution X-ray diffraction
ISSN号	0022-0248
通讯作者	liu, jp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jpliu@red.semi.ac.cn
中文摘要	the effects of pre-tmin flow prior to qw growth and tmin flow rates during qw growth on the interface and optical properties of ingan/gan mqws were investigated. pre-depositing indium prior to qw growth and an appropriate tmin flow rate can improve the interface abruptness and increase the el intensity. ingan/gan mqws with improved interface abruptness have increasing emission intensity and wavelength. we attribute the interface improvement and the increase of el intensity to the improvement of the indium compositional profiles. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8138]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu JP,Jin RQ,Zhu JJ,et al. Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells[J]. journal of crystal growth,2004,264(1-3):53-57.
APA	Liu JP.,Jin RQ.,Zhu JJ.,Zhang JC.,Wang JF.,...&Yang H.(2004).Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells.journal of crystal growth,264(1-3),53-57.
MLA	Liu JP,et al."Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells".journal of crystal growth 264.1-3(2004):53-57.