Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices
Xu YQ
刊名acta physica sinica
2004
卷号53期号:5页码:1474-1482
关键词superlattice
ISSN号1000-3290
通讯作者ni, hq, chinese acad sci, inst semicond, beijing 100083, peoples r china.
中文摘要we have calculated the bond distributions and atom positions of gaas/galnnassb superlattices using keating's semiempirical valence force field (vff) model and monte carlo simulation. the electronic structures of the superlattices are calculated using folded spectrum method (fsm) combined with an empirical pseudopotential (ep) proposed by williamson et al.. the effects of n and sb on superlattice energy levels are discussed. we find that the deterioration of the optical properties induced by n can be explained by the localization of the conduction-band states around the n atom. the electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the bulk gaas and gainas.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-09
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/8084]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu YQ. Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices[J]. acta physica sinica,2004,53(5):1474-1482.
APA Xu YQ.(2004).Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices.acta physica sinica,53(5),1474-1482.
MLA Xu YQ."Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices".acta physica sinica 53.5(2004):1474-1482.
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