Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

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	Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
	Ye XL; Jin P; Xu B; Li CM
刊名	journal of crystal growth
	2004
卷号	269 期号:2-4 页码:181-186
关键词	photoluminescence
ISSN号	0022-0248
通讯作者	shi, gx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: gxshi@red.semi.ac.cn
中文摘要	the effect of rapid thermal annealing on the inas quantum dots (qds) grown by atomic layer molecular beam epitaxy and capped with ingaas layer has been investigated using transmission electron microscopy and photoluminescence (pl). different from the previously reported results, no obvious blueshift of the pl emission of qds is observed until the annealing temperature increases up to 800 degreesc. the size and shape of the qds annealed at 750 degreesc have hardly changed indicating the relatively weak ga/in interdiffusion, which is characterized by little blueshift of the pl peak of qds. the qd size increases largely and a few large clusters can be observed after 800 degreesc rta, implying the fast interdiffusion and the formation of ingaas qds. these results indicate that the delay of the blueshift of the pl peak of qds is correlated with the abnormal interdiffusion process, which can be explained by two possible reasons: the reduction of excess-as-induced defects and the redistribution of in, ga atoms around the inas qds resulted from the sub-monolayer deposition of ingaas capping layer. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7964]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Jin P,Xu B,et al. Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy[J]. journal of crystal growth,2004,269(2-4):181-186.
APA	Ye XL,Jin P,Xu B,&Li CM.(2004).Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy.journal of crystal growth,269(2-4),181-186.
MLA	Ye XL,et al."Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy".journal of crystal growth 269.2-4(2004):181-186.