Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure

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	Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
	Han XX; Li DB
刊名	physica status solidi b-basic research
	2004
卷号	241 期号:13 页码:3000-3008
关键词	FIELD-EFFECT TRANSISTORS
ISSN号	0370-1972
通讯作者	han, xx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xxhan@red.semi.ac.cn
中文摘要	the theoretical electron mobility limited by dislocation scattering of a two-dimensional electron gas confined near the interface of an alxga1-xn/gan heterostructure is calculated. the accurate wave functions and electron distributions of the three lowest subbands for a typical structure are obtained by solving the schrodinger and poisson equations self-consistently. based on the model of treating dislocation as a charged line, a simple scattering potential, a square-well potential, is utilized. the estimated mobility suggests that such a choice can simplify the calculation without introducing significant deviation from experimental data. it is also found that the dislocation scattering dominates both the low- and moderate-temperature mobilities and accounts for the nearly flattening-out behavior with increasing temperature. to clarify the role of dislocation scattering all standard scattering mechanisms are included in the calculation.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7912]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han XX,Li DB. Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure[J]. physica status solidi b-basic research,2004,241(13):3000-3008.
APA	Han XX,&Li DB.(2004).Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure.physica status solidi b-basic research,241(13),3000-3008.
MLA	Han XX,et al."Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure".physica status solidi b-basic research 241.13(2004):3000-3008.