Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE | |
于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥 | |
刊名 | Chinese Optics Letters |
2003 | |
期号 | 01页码:21-23 |
关键词 | GaAs in or of Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE MQW by |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6352302 |
专题 | 山东大学 |
作者单位 | State Key Laboratory of Crystal Materials, Shandong University Jj'nan 250100,State Key Labora |
推荐引用方式 GB/T 7714 | 于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥. Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE[J]. Chinese Optics Letters,2003(01):21-23. |
APA | 于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥.(2003).Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE.Chinese Optics Letters(01),21-23. |
MLA | 于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥."Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE".Chinese Optics Letters .01(2003):21-23. |
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