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Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE
于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥
刊名Chinese Optics Letters
2003
期号01页码:21-23
关键词GaAs in or of Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE MQW by
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内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/6352302
专题山东大学
作者单位State Key Laboratory of Crystal Materials, Shandong University Jj'nan 250100,State Key Labora
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于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥. Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE[J]. Chinese Optics Letters,2003(01):21-23.
APA 于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥.(2003).Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE.Chinese Optics Letters(01),21-23.
MLA 于永芹,张晓阳,黄柏标,尉吉勇,周海龙,潘教青,秦晓燕,任忠祥."Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE".Chinese Optics Letters .01(2003):21-23.
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