Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3
Yuan KY(袁恺阳) ; Li GR(李国荣) ; Zheng LY(郑嘹赢) ; Cheng LH(程丽红) ; Meng L(孟磊) ; Yao Z(姚政) ; Yin QR(殷庆瑞)
刊名Journal of Alloys and Compounds
2010-08-06
卷号503期号:2页码:507-513
ISSN号0925-8388
其他题名Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3
通讯作者郑嘹赢
中文摘要The infiltration of molten Bi2O3 into ZnO varistors was carried out. The sintered varistor disks doped with Bi2O3 were painted by Bi2O3 paste on the surfaces and then were reheat-treated. The DC degradation test was carried out to demonstrate the electrical stability of varistors. The influence of the Bi2O3 infiltration on the electrical nonlinear characteristics and stability of varistors was analyzed by capacitance–voltage (C–V) measurements and impedance spectroscopy. The results showed that the Bi2O3 infiltration process at temperatures from 800 to 900 ?C reduced the donor density in ZnO grains and inhibited the decrease of grain boundary resistance of varistors caused by degradation. The samples infiltrated with Bi2O3 at 850 and 900 ?C exhibited an excellent electrical stability and maintained relatively high nonlinear characteristics. The enhancement in the electrical stability may be attributed to the diffusion of oxygen into the body of ceramics facilitated by the infiltration of molten Bi2O3.
学科主题无机非金属材料
收录类别SCI收录 ; EI收录
语种英语
WOS记录号WOS:000280927800047
公开日期2012-07-05
内容类型期刊论文
源URL[http://ir.sic.ac.cn/handle/331005/1248]  
专题上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
推荐引用方式
GB/T 7714
Yuan KY,Li GR,Zheng LY,et al. Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3[J]. Journal of Alloys and Compounds,2010,503(2):507-513.
APA 袁恺阳.,李国荣.,郑嘹赢.,程丽红.,孟磊.,...&殷庆瑞.(2010).Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3.Journal of Alloys and Compounds,503(2),507-513.
MLA 袁恺阳,et al."Improvement in electrical stability of ZnO varistors by infiltration of molten Bi2O3".Journal of Alloys and Compounds 503.2(2010):507-513.
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