借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 无机功能材料与器件重点实验室 > 期刊论文

	借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响
	Zheng RK ; Habermeier Hu ; Chan HLW ; Choy CL ; 罗豪甦
刊名	Physical Review B
	2010-04-30
期号	81 页码:104427-104435
ISSN号	1098-0121
其他题名	Effects of substrate-induced strain on transport properties of LaMnO3 and CaMnO3 thin films using ferroelectric poling and converse piezoelectric effect
通讯作者	郑仁奎
中文摘要	We have investigated the effects of the strain induced by ferroelectric poling or the converse piezoelectric effect on the transport properties of LaMnO3+ and CaMnO3 thin films grown on ferroelectric 0.67Pb Mg1/3Nb2/3 O3-0.33PbTiO3 single-crystal substrates. The ferroelectric poling of the substrate gives rise to a reduction in the in-plane tensile strain of the LaMnO3+ film, which results in a significant decrease in the resistance and increase in the insulator-to-metal transition temperature TP of the film. The ferroelectric poling also leads to opposite effects on the magnetoresistance MR below and above TP, namely, MR is reduced for T TP while MR is enhanced for T TP. These strain effects are explained in terms of coexisting phases whose volume fractions are modified as a result of the reduction in the Jahn-Teller JT distortion due to ferroelectric poling. An investigation of the effects of the strain induced by the converse piezoelectric effect on the resistance of the LaMnO3+ and CaMnO3 films shows that the resistance-strain coefficients R/R / cfilm /cfilm of the LaMnO3+ film is much larger than those of the CaMnO3 film. This result may imply that the strain-induced modification of the electronic bandwidth alone cannot account for the large R/R / cfilm /cfilm observed in the LaMnO3+ ilm, and highlights that the strong coupling of charge carriers to JT distortion is crucial for understanding the effects of the substrate-induced strain in manganite thin films.
学科主题	材料科学
收录类别	SCI收录
语种	英语
公开日期	2012-07-05
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/1187]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
推荐引用方式 GB/T 7714	Zheng RK,Habermeier Hu,Chan HLW,等. 借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响[J]. Physical Review B,2010(81):104427-104435.
APA	Zheng RK,Habermeier Hu,Chan HLW,Choy CL,&罗豪甦.(2010).借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响.Physical Review B(81),104427-104435.
MLA	Zheng RK,et al."借助于压电效应的LaMnO3和CaMnO3薄膜中基底诱导的应力效应对传输性质的影响".Physical Review B .81(2010):104427-104435.