Desorption and Ripening of Low Density InAs Quantum Dots

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	Desorption and Ripening of Low Density InAs Quantum Dots
	Zhan F
刊名	journal of nanoscience and nanotechnology
	2009
卷号	9 期号:2 页码:844-847
关键词	Quantum Dots Desorption Molecular Beam Epitaxy
ISSN号	1533-4880
通讯作者	huang ss tsinghua univ dept elect engn state key lab integrated optoelect beijing 100084 peoples r china.
中文摘要	in this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (qds) suited for the study of single od properties without resorting to submicron lithography. experiment results demonstrate that inas desorption is significant during growing the low density qds. ripening of inas qds is clearly observed during the post-growth annealing. photoluminescence spectroscopy reveals that the emission wavelength of low density inas qds arrives at 1332.4 nm with a gaas capping layer.
学科主题	半导体化学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7325]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhan F. Desorption and Ripening of Low Density InAs Quantum Dots[J]. journal of nanoscience and nanotechnology,2009,9(2):844-847.
APA	Zhan F.(2009).Desorption and Ripening of Low Density InAs Quantum Dots.journal of nanoscience and nanotechnology,9(2),844-847.
MLA	Zhan F."Desorption and Ripening of Low Density InAs Quantum Dots".journal of nanoscience and nanotechnology 9.2(2009):844-847.