Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy

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	Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
	Xu YQ
刊名	chinese physics letters
	2009
卷号	26 期号:4 页码:art. no. 047802
关键词	INAS
ISSN号	0256-307x
通讯作者	guo j nw polytech univ sch mat xian 710000 peoples r china. e-mail address: jieggg1020@sina.com
中文摘要	short period inas(4 ml)/gasb(8 ml) superlattices (sls) with insb- and mixed-like (or ga(1-x)in(x)as(1-)ysb(y)-like) interfaces (ifs) are grown by molecular-beam epitaxy (mbe) on (001) gasb substrates at optimized growth temperature. raman scattering reveals that two kinds of ifs can be formed by controlling shutter sequences. x-ray diffraction (xrd) and atomic force microscopy (afm) demonstrate that sls with mixed-like ifs are more sensitive to growth temperature than that with insb-like ifs. the photoluminescence (pl) spectra of sls with mixed-like ifs show a stronger intensity and narrower line width than with insb-like ifs. it is concluded that inas/gasb sls with mixed-like ifs have better crystalline and optical properties.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60607016 60625405national basic research program of china 2007cb936304 supported by the national natural science foundation of china under grant nos 60607016 and 60625405, and the national basic research program of china under grant no 2007cb936304.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7277]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu YQ. Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy[J]. chinese physics letters,2009,26(4):art. no. 047802.
APA	Xu YQ.(2009).Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy.chinese physics letters,26(4),art. no. 047802.
MLA	Xu YQ."Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy".chinese physics letters 26.4(2009):art. no. 047802.