Gap states and microstructure of microcrystalline silicon thin films
Peng WB ; Liu SY ; Xiao HB ; Zhang CS ; Shi MJ ; Zeng XB ; Xu YY ; Kong GL ; Yu YD
刊名acta physica sinica
2009
卷号58期号:8页码:5716-5720
关键词gap states grain boundary microcrystalline silicon modulated photocurrent
ISSN号1000-3290
通讯作者zeng xb chinese acad sci inst semicond key lab semicond mat sci beijing 100083 peoples r china. e-mail address: xbzeng@semi.ac.cn ; yyxu@semi.ac.cn
中文摘要the density of states (dos) above fermi level of hydrogenated microcrystalline silicon (mu c-si h) films is correlated to the material microstructure. we use raman scattering and infrared absorption spectra to characterize the structure of the films made with different hydrogen dilution ratios. the dos of the films is examined by modulated photocurrent measurement. the results have been accounted for in the framework of a three-phase model comprised of amorphous and crystalline components, with the grain boundary as the third phase. we observed that the dos increases monotonically as the grain boundary volume fractions f(gb) is increased, which indicates a positive correlation between the dos and the grain boundary volume fraction.
学科主题半导体材料
收录类别SCI
资助信息state key development program for basic research of china 2006cb202604 national natural science foundation of china 60576036 project supported by the state key development program for basic research of china (grant no. 2006cb202604) and the national natural science foundation of china (grant no. 60576036).
语种中文
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/7017]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Peng WB,Liu SY,Xiao HB,et al. Gap states and microstructure of microcrystalline silicon thin films[J]. acta physica sinica,2009,58(8):5716-5720.
APA Peng WB.,Liu SY.,Xiao HB.,Zhang CS.,Shi MJ.,...&Yu YD.(2009).Gap states and microstructure of microcrystalline silicon thin films.acta physica sinica,58(8),5716-5720.
MLA Peng WB,et al."Gap states and microstructure of microcrystalline silicon thin films".acta physica sinica 58.8(2009):5716-5720.
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