InAs/GaSb superlattices for photodetection in short wavelength infrared range | |
Xu YQ | |
刊名 | infrared physics & technology |
2009 | |
卷号 | 52期号:4页码:124-126 |
关键词 | Superlattices InAs/GaSb Short wavelength Infrared detector |
ISSN号 | 1350-4495 |
通讯作者 | guo j nw polytech univ xian 710000 shaanxi peoples r china. e-mail address: jieggg1020@sina.com |
中文摘要 | the first report of a short wavelength infrared detector based on type ii inas/gasb superlattices is presented. very short period superlattices containing inas (2ml)/gasb (8ml) superlattices (sls) were grown by molecular-beam epitaxy on gasb substrates. the photoluminescence showed a cut-off wavelength at 2.1 mu m at 10 k and 2.6 mu m at 300 k. room-temperature optical transmittance spectra shows obvious absorption in inas (2ml)/gasb (8ml) sl in the range of 450-680 mev, i.e. 1.8-2.7 mu m. the cut-off wavelength moved from 2.3 mu m to 2.6 mu m with temperature rising from 77 k to 300 k in photoresponse spectra. the blackbody response r-v exponentially decreased as a function of 1/t in two temperature sections (130-200 k and 230-300 k). the blackbody detectivity d-bb(center dot) was beyond 1 x 10(8) cmhz(1/2)/w at room temperature. (c) 2009 elsevier b.v. all rights reserved. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/6995] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu YQ. InAs/GaSb superlattices for photodetection in short wavelength infrared range[J]. infrared physics & technology,2009,52(4):124-126. |
APA | Xu YQ.(2009).InAs/GaSb superlattices for photodetection in short wavelength infrared range.infrared physics & technology,52(4),124-126. |
MLA | Xu YQ."InAs/GaSb superlattices for photodetection in short wavelength infrared range".infrared physics & technology 52.4(2009):124-126. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论