Single-photon emission from a single InAs quantum dot

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Single-photon emission from a single InAs quantum dot
	Dou, XM ; Sun, BQ ; Huang, SS ; Ni, HQ ; Niu, ZC
刊名	chinese physics letters
	2008
卷号	25 期号:2 页码:501-504
关键词	FLUORESCENCE TEMPERATURE
ISSN号	0256-307x
通讯作者	dou, xm, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china. 电子邮箱地址: bqsun@red.semi.ac.cn
中文摘要	excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of single inas quantum dots. exciton and biexciton emissions, whose photoluminescence intensities have linear and quadratic excitation power dependences, respectively, are identified. under pulsed laser excitation, the zero time delay peak of second order correlation function corresponding to exciton emission is well suppressed, which is a clear evidence of single photon emission.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6858]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Dou, XM,Sun, BQ,Huang, SS,et al. Single-photon emission from a single InAs quantum dot[J]. chinese physics letters,2008,25(2):501-504.
APA	Dou, XM,Sun, BQ,Huang, SS,Ni, HQ,&Niu, ZC.(2008).Single-photon emission from a single InAs quantum dot.chinese physics letters,25(2),501-504.
MLA	Dou, XM,et al."Single-photon emission from a single InAs quantum dot".chinese physics letters 25.2(2008):501-504.