The influence of Schottky contact metals on the strain of AlGaN barrier layers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The influence of Schottky contact metals on the strain of AlGaN barrier layers
	Lin, ZJ ; Zhao, JZ ; Corrigan, TD ; Wang, Z ; You, ZD ; Wang, ZG ; Lu, W
刊名	journal of applied physics
	2008
卷号	103 期号:4 页码:art. no. 044503
关键词	PIEZOELECTRIC POLARIZATION HETEROSTRUCTURES
ISSN号	0021-8979
通讯作者	lin, zj, shandong univ, sch phys & microelect, jinan 250100, peoples r china. 电子邮箱地址: linzj@sdu.edu.cn
中文摘要	ir and ni schottky contacts on strained al0.25ga0.75n/gan heterostructures, and the ni schottky contact with different areas on strained al0.3ga0.7n/gan heterostructures have been prepared. using the measured capacitance-voltage curves and the current-voltage curves obtained from the prepared schottky contacts, the polarization charge densities of the algan barrier layer for the schottky contacts were analyzed and calculated by self-consistently solving schrodinger's and poisson's equations. it is found that the polarization charge density of the algan barrier layer for the ir schottky contact on strained al0.25ga0.75n/gan heterostructures is different from that of the ni schottky contact, and the polarization charge densities of the algan barrier layer for ni schottky contacts with different areas on strained al0.3ga0.7n/gan heterostructures are different corresponding to different ni schottky contact areas. as a result, the conclusion can be made that schottky contact metals on strained algan/gan heterostructures have an influence on the strain of the algan barrier layer. (c) 2008 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6780]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lin, ZJ,Zhao, JZ,Corrigan, TD,et al. The influence of Schottky contact metals on the strain of AlGaN barrier layers[J]. journal of applied physics,2008,103(4):art. no. 044503.
APA	Lin, ZJ.,Zhao, JZ.,Corrigan, TD.,Wang, Z.,You, ZD.,...&Lu, W.(2008).The influence of Schottky contact metals on the strain of AlGaN barrier layers.journal of applied physics,103(4),art. no. 044503.
MLA	Lin, ZJ,et al."The influence of Schottky contact metals on the strain of AlGaN barrier layers".journal of applied physics 103.4(2008):art. no. 044503.