Strong visible and infrared photoluminescence from Er-implanted silicon nitride films

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	Strong visible and infrared photoluminescence from Er-implanted silicon nitride films
	Chen P
刊名	journal of physics d-applied physics
	2008
卷号	41 期号:13 页码:art. no. 135101
关键词	1.54 MU-M
ISSN号	0022-3727
通讯作者	ding, wc, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: wcd04@semi.ac.cn
中文摘要	silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. the films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). after high temperature annealing, strong visible and infrared photoluminescence (pl) was observed. the visible pl consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (si-ncs) and si-nc/sinx interface states. raman spectra and hrtem measurements have been performed to confirm the existence of si-ncs. the implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m pl.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6618]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen P. Strong visible and infrared photoluminescence from Er-implanted silicon nitride films[J]. journal of physics d-applied physics,2008,41(13):art. no. 135101.
APA	Chen P.(2008).Strong visible and infrared photoluminescence from Er-implanted silicon nitride films.journal of physics d-applied physics,41(13),art. no. 135101.
MLA	Chen P."Strong visible and infrared photoluminescence from Er-implanted silicon nitride films".journal of physics d-applied physics 41.13(2008):art. no. 135101.