MOCVD growth of InN using a GaN buffer

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	MOCVD growth of InN using a GaN buffer
	Yang H; Wang LL; Wang H; Yang H; Zhu JJ; Wang H; Jiang DS
刊名	superlattices and microstructures
	2008
卷号	43 期号:2 页码:81-85
关键词	surface
ISSN号	0749-6036
通讯作者	wang, ll, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangll@red.semi.ac.cn
中文摘要	we have investigated mocvd growth of inn oil sapphire with and without a gan buffer between 490 and 520 degrees c. the buffer significantly improves the surface morphological uniformity and electrical properties of inn epilayers. characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. below 520 degrees c, increasing temperature improves structural quality but degrades electrical properties. hall data from this study suggest that v-n-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. we believe that reducing carrier concentration and dislocation density is effective to increase the hall mobility of inn. (c) 2007 elsevier ltd. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6506]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Wang LL,Wang H,et al. MOCVD growth of InN using a GaN buffer[J]. superlattices and microstructures,2008,43(2):81-85.
APA	Yang H.,Wang LL.,Wang H.,Yang H.,Zhu JJ.,...&Jiang DS.(2008).MOCVD growth of InN using a GaN buffer.superlattices and microstructures,43(2),81-85.
MLA	Yang H,et al."MOCVD growth of InN using a GaN buffer".superlattices and microstructures 43.2(2008):81-85.