Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films

	Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films
	Zhang, LP ; Zhang, JJ ; Zhang, X ; Cao, Y ; Zhao, Y
刊名	THIN SOLID FILMS
	2012
卷号	520 期号:18 页码:5940-5945
关键词	Helium dilution mu c-SiGe:H Atomic H Excitation transfer effect Optical emission spectroscopy
ISSN号	0040-6090
通讯作者	Zhang, JJ (reprint author), Nankai Univ, Inst Photoelect Thin Film Devices & Tech, 94 Weijin Rd, Tianjin 300071, Peoples R China.
中文摘要	A combination of hydrogen and helium dilutions was introduced when the microcrystalline silicon germanium (mu c-SiGe:H) thin films were prepared by very high frequency plasma enhanced chemical vapor deposition on a low-temperature substrate. An optimum he
学科主题	Materials Science; Physics
收录类别	2012SCI-095
原文出处	10.1016/j.tsf.2012.05.017
语种	英语
公开日期	2013-04-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114952]
专题	上海微系统与信息技术研究所_新能源技术_期刊论文
推荐引用方式 GB/T 7714	Zhang, LP,Zhang, JJ,Zhang, X,et al. Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films[J]. THIN SOLID FILMS,2012,520(18):5940-5945.
APA	Zhang, LP,Zhang, JJ,Zhang, X,Cao, Y,&Zhao, Y.(2012).Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films.THIN SOLID FILMS,520(18),5940-5945.
MLA	Zhang, LP,et al."Active roles of helium in the growth of hydrogenated microcrystalline silicon germanium thin films".THIN SOLID FILMS 520.18(2012):5940-5945.