| SiH interacting with Si surfaces:MD study | |
| Zhao Cheng-li; Sun Wei-zhong; Zhang Jun-yuan; Chen Feng; He Ping-ni; Lu Xiao-dan; F.Gou | |
| 2011 | |
| 会议日期 | 2011-8-8 |
| 会议地点 | 黄山 |
| 关键词 | deposited PECVD molecular dynamics hydrogenated amorphous silicon film |
| 会议录 | 第十五届全国等离子体科学技术会议论文集
 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6235044 |
| 专题 | 贵州大学 |
| 作者单位 | 1.[1]Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China 2.[2]College of science, Guizhou University, Guiyang 550025, China Key Lab of Radiation Physics & Technology Ministry of Education, Chengdu 610064, China Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China Key Lab of Radiation Physics & Technology Ministry of Education, Chengdu 610064, China 3.[3]FOM Institute for Plasma Physics, 3439 MN Nieuwegein, the Netherlands |
| 推荐引用方式 GB/T 7714 | Zhao Cheng-li,Sun Wei-zhong,Zhang Jun-yuan,et al. SiH interacting with Si surfaces:MD study[C]. 见:. 黄山. 2011-8-8. |
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