High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser

	High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser
	Zhang, Yu ; Wang, Yongbin ; Xu, Yingqiang ; Xu, Yun ; Niu, Zhichuan ; Song, Guofeng
刊名	Journal of Semiconductors
	2012
卷号	33 期号:4 页码:044006
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-04-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23915]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,et al. High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser[J]. Journal of Semiconductors,2012,33(4):044006.
APA	Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,Xu, Yun,Niu, Zhichuan,&Song, Guofeng.(2012).High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser.Journal of Semiconductors,33(4),044006.
MLA	Zhang, Yu,et al."High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser".Journal of Semiconductors 33.4(2012):044006.