Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface

	Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface
	Liu, Jian-Qing ; Chen, Yong-Hai ; Xu, Bo ; Wang, Zhan-Guo
刊名	advanced materials research
	2012
卷号	341-342 页码:73-76
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-04-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23917]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,et al. Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface[J]. advanced materials research,2012,341-342:73-76.
APA	Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,&Wang, Zhan-Guo.(2012).Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface.advanced materials research,341-342,73-76.
MLA	Liu, Jian-Qing,et al."Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface".advanced materials research 341-342(2012):73-76.