Si delta doping inside InAs/GaAs quantum dots with different doping densities

	Si delta doping inside InAs/GaAs quantum dots with different doping densities
	Wang, Ke-Fan ; Gu, Yongxian ; Yang, Xiaoguang ; Yang, Tao ; Wang, Zhanguo
刊名	journal of vacuum science and technology b: microelectronics and nanometer structures
	2012
卷号	30 期号:4 页码:041808
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-04-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23934]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,et al. Si delta doping inside InAs/GaAs quantum dots with different doping densities[J]. journal of vacuum science and technology b: microelectronics and nanometer structures,2012,30(4):041808.
APA	Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,Yang, Tao,&Wang, Zhanguo.(2012).Si delta doping inside InAs/GaAs quantum dots with different doping densities.journal of vacuum science and technology b: microelectronics and nanometer structures,30(4),041808.
MLA	Wang, Ke-Fan,et al."Si delta doping inside InAs/GaAs quantum dots with different doping densities".journal of vacuum science and technology b: microelectronics and nanometer structures 30.4(2012):041808.