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	Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm
	Ma, Liang; Zhang, Xuehong; Li, Honglai; Tan, Huang; Yang, Yankun; Xu, Yadan; Hu, Wei; Zhu, Xiaoli; Zhuang, Xiujuan; Pan, Anlian
刊名	Semiconductor Science and Technology
	2015
卷号	Vol.30 No.10
ISSN号	1361-6641
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6094545
专题	湖南大学
作者单位	1.Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 2.410082, China
推荐引用方式 GB/T 7714	Ma, Liang,Zhang, Xuehong,Li, Honglai,et al. Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm[J]. Semiconductor Science and Technology,2015,Vol.30 No.10.
APA	Ma, Liang.,Zhang, Xuehong.,Li, Honglai.,Tan, Huang.,Yang, Yankun.,...&Pan, Anlian.(2015).Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm.Semiconductor Science and Technology,Vol.30 No.10.
MLA	Ma, Liang,et al."Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm".Semiconductor Science and Technology Vol.30 No.10(2015).

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