Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing

	Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing
	Hu SX (Hu, Shaoxu) ; Han PD (Han, Peide) ; Wang S (Wang, Shuai) ; Mao X (Mao, Xue) ; Li XY (Li, Xinyi) ; Gao LP (Gao, Lipeng)
刊名	semiconductor science and technology
	2012
卷号	27 期号:10 页码:102002
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23818]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Hu SX ,Han PD ,Wang S ,et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing[J]. semiconductor science and technology,2012,27(10):102002.
APA	Hu SX ,Han PD ,Wang S ,Mao X ,Li XY ,&Gao LP .(2012).Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing.semiconductor science and technology,27(10),102002.
MLA	Hu SX ,et al."Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing".semiconductor science and technology 27.10(2012):102002.