Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes

	Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes
	Li B (Li Bin) ; Yang HW (Yang Huai-Wei) ; Gui Q (Gui Qiang) ; Yang XH (Yang Xiao-Hong) ; Wang J (Wang Jie) ; Wang XP (Wang Xiu-Ping) ; Liu SQ (Liu Shao-Qing) ; Han Q (Han Qin)
刊名	chinese physics letters
	2012
卷号	29 期号:11 页码:118503
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23810]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Li B ,Yang HW ,Gui Q ,et al. Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes[J]. chinese physics letters,2012,29(11):118503.
APA	Li B .,Yang HW .,Gui Q .,Yang XH .,Wang J .,...&Han Q .(2012).Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes.chinese physics letters,29(11),118503.
MLA	Li B ,et al."Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes".chinese physics letters 29.11(2012):118503.