Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

	Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
	Luan CB (Luan, Chongbiao) ; Lin ZJ (Lin, Zhaojun) ; Feng ZH (Feng, Zhihong) ; Meng LG (Meng, Lingguo) ; Lv YJ (Lv, Yuanjie) ; Cao ZF (Cao, Zhifang) ; Yu YX (Yu, Yingxia) ; Wang ZG (Wang, Zhanguo)
刊名	journal of applied physics
	2012
卷号	112 期号:5 页码:054513
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23866]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Luan CB ,Lin ZJ ,Feng ZH ,et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors[J]. journal of applied physics,2012,112(5):054513.
APA	Luan CB .,Lin ZJ .,Feng ZH .,Meng LG .,Lv YJ .,...&Wang ZG .(2012).Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors.journal of applied physics,112(5),054513.
MLA	Luan CB ,et al."Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors".journal of applied physics 112.5(2012):054513.