Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method
Zheng J (Zheng J.) ; Zuo YH (Zuo Y. H.) ; Zhang LZ (Zhang L. Z.) ; Wang W (Wang W.) ; Xue CL (Xue C. L.) ; Cheng BW (Cheng B. W.) ; Yu JZ (Yu J. Z.) ; Guo HQ (Guo H. Q.) ; Wang QM (Wang Q. M.)
刊名journal of luminescence
2010
卷号130期号:10页码:1760-1763
关键词Photoluminescence Energy transfer Erbium Bismuth
合作状况国内
英文摘要er/bi codoped sio2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. the bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees c, characterized by x-ray diffraction, and rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. fine structures of the er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (pl) measurement. the pl intensity at 1.54 gm reached maximum at 800 degrees c and decreased dramatically at 1000 degrees c. the pl dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. excitation spectrum measurements further reveal the role of bi3+ ions for er3+ ions near infrared light emission. through sol-gel method and thermal treatment, bi3+ ions can provide a perfect environment for er3+ ion light emission by forming er-bi-si-o complex. furthermore, energy transfer from bi3+ ions to er3+ ions is evidenced and found to be a more efficient way for er3+ ions near infrared emission. this makes the bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared led; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:02:33z no. of bitstreams: 1 role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in erbi codoped sio2 thin film prepared by sol-gel method.pdf: 400263 bytes, checksum: 0178c3f34788f3f3f13c0385c5ed1acd (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:08:20z (gmt) no. of bitstreams: 1 role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in erbi codoped sio2 thin film prepared by sol-gel method.pdf: 400263 bytes, checksum: 0178c3f34788f3f3f13c0385c5ed1acd (md5); made available in dspace on 2010-09-07t13:08:20z (gmt). no. of bitstreams: 1 role of bi3+ ions for er3+ ions efficient 1.54 mu m light emission in erbi codoped sio2 thin film prepared by sol-gel method.pdf: 400263 bytes, checksum: 0178c3f34788f3f3f13c0385c5ed1acd (md5) previous issue date: 2010; this work was supported by the national basic research program of china (973 program) (no. 2007-cb613404) and by state key lab on integrated optoelectronics, is division (project no. 20080301). the authors want to thank professor z.q. ma from peking university for rbs measurement and professor b.h. li, master l.s. lin from fujian normal university for ple test.; 国内
学科主题光电子学
收录类别SCI
资助信息this work was supported by the national basic research program of china (973 program) (no. 2007-cb613404) and by state key lab on integrated optoelectronics, is division (project no. 20080301). the authors want to thank professor z.q. ma from peking university for rbs measurement and professor b.h. li, master l.s. lin from fujian normal university for ple test.
语种英语
公开日期2010-09-07 ; 2010-10-15
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/13504]  
专题半导体研究所_集成光电子学国家重点实验室
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GB/T 7714
Zheng J ,Zuo YH ,Zhang LZ ,et al. Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method[J]. journal of luminescence,2010,130(10):1760-1763.
APA Zheng J .,Zuo YH .,Zhang LZ .,Wang W .,Xue CL .,...&Wang QM .(2010).Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method.journal of luminescence,130(10),1760-1763.
MLA Zheng J ,et al."Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method".journal of luminescence 130.10(2010):1760-1763.
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