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	Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE)
	Xu Y. ; Gao J. ; Zheng X. ; Wang X. ; Wang T. ; Chen H.
	2005
会议名称	ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005
会议地点	Changchun, China
关键词	With reactive low voltage ion plating technique ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100 200 300 and 400C for 2 hours respectively. The effects of vacuum annealing on structural optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition sheet resistance of ITO films had contrary changing trend with the IR reflectance as well.
收录类别	EI
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/33620]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Xu Y.,Gao J.,Zheng X.,et al. Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE)[C]. 见:ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005. Changchun, China.

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