Tuning photoluminescence of single InAs quantum dot by electric field

CORC > 半导体研究所 > 中国科学院半导体研究所 > 半导体超晶格国家重点实验室

	Tuning photoluminescence of single InAs quantum dot by electric field
	Chang XY (Chang Xiu-Ying) ; Dou XM (Dou Xiu-Ming) ; Sun BQ (Sun Bao-Quan) ; Xiong YH (Xiong Yong-Hua) ; Ni HQ (Ni Hai-Qiao) ; Niu ZC (Niu Zhi-Chuan)
刊名	acta physica sinica
	2010
卷号	59 期号:6 页码:4279-4282
关键词	single InAs quantum dot Stark effect electron-hole separation
通讯作者	sun, bq, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china.
合作状况	其它
英文摘要	by using photoluminescence (pl) and time-resolved pl spectra, the optical properties of single inas quantum dot (qd) embedded in the p-1-n structure have been studied under an applied electric field with the increasing of electric field, the exciton lifetime increases due to the stark effect. we noticed that the decrease or quenching of pl intensity with increasing the electric field is mainly due to the decrease of the carriers captured by qd.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-05t07:10:45z no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-07-05t07:42:58z (gmt) no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5); made available in dspace on 2010-07-05t07:42:58z (gmt). no. of bitstreams: 1 tuning photoluminescence of single inas quantum dot by electric field.pdf: 409197 bytes, checksum: b55ef404988cc866becdadd6686749ee (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant no 60676054); 其它
学科主题	半导体物理
收录类别	SCI
资助信息	project supported by the national natural science foundation of china (grant no 60676054)
语种	中文
公开日期	2010-07-05 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11351]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Chang XY ,Dou XM ,Sun BQ ,et al. Tuning photoluminescence of single InAs quantum dot by electric field[J]. acta physica sinica,2010,59(6):4279-4282.
APA	Chang XY ,Dou XM ,Sun BQ ,Xiong YH ,Ni HQ ,&Niu ZC .(2010).Tuning photoluminescence of single InAs quantum dot by electric field.acta physica sinica,59(6),4279-4282.
MLA	Chang XY ,et al."Tuning photoluminescence of single InAs quantum dot by electric field".acta physica sinica 59.6(2010):4279-4282.