Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling

	Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling
	Zhou SQ (Zhou, Shengqiang) ; Chen L (Chen, Lin) ; Shalimov A (Shalimov, Artem) ; Zhao JH (Zhao, Jianhua) ; Helm M (Helm, Manfred)
刊名	aip advances
	2012
卷号	2 期号:4 页码:042102
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23760]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhou SQ ,Chen L ,Shalimov A ,et al. Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling[J]. aip advances,2012,2(4):042102.
APA	Zhou SQ ,Chen L ,Shalimov A ,Zhao JH ,&Helm M .(2012).Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling.aip advances,2(4),042102.
MLA	Zhou SQ ,et al."Depth profile of the tetragonal distortion in thick GaMnAs layers grown on GaAs by Rutherford backscattering/channeling".aip advances 2.4(2012):042102.