Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy | |
Lixia Li; Dong Pan; Yongzhou Xue; Xiaolei Wang; Miaoling Lin; Dan Su; Qinglin Zhang; Xuezhe Yu; Hyok So; Dahai Wei | |
刊名 | Nano Letters |
2017 | |
卷号 | Vol.17 No.2页码:622-630 |
关键词 | GaAs1−xSbx nanowires bandgap tuning self-catalyzed molecular-beam epitaxy rectifying behavior |
ISSN号 | 1530-6984;1530-6992 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6047251 |
专题 | 湖南大学 |
作者单位 | State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, China |
推荐引用方式 GB/T 7714 | Lixia Li,Dong Pan,Yongzhou Xue,et al. Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,Vol.17 No.2:622-630. |
APA | Lixia Li.,Dong Pan.,Yongzhou Xue.,Xiaolei Wang.,Miaoling Lin.,...&Jianhua Zhao.(2017).Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,Vol.17 No.2,622-630. |
MLA | Lixia Li,et al."Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters Vol.17 No.2(2017):622-630. |
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