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Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy
Lixia Li; Dong Pan; Yongzhou Xue; Xiaolei Wang; Miaoling Lin; Dan Su; Qinglin Zhang; Xuezhe Yu; Hyok So; Dahai Wei
刊名Nano Letters
2017
卷号Vol.17 No.2页码:622-630
关键词GaAs1−xSbx nanowires bandgap tuning self-catalyzed molecular-beam epitaxy rectifying behavior
ISSN号1530-6984;1530-6992
URL标识查看原文
公开日期[db:dc_date_available]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/6047251
专题湖南大学
作者单位State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, China
推荐引用方式
GB/T 7714
Lixia Li,Dong Pan,Yongzhou Xue,et al. Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,Vol.17 No.2:622-630.
APA Lixia Li.,Dong Pan.,Yongzhou Xue.,Xiaolei Wang.,Miaoling Lin.,...&Jianhua Zhao.(2017).Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,Vol.17 No.2,622-630.
MLA Lixia Li,et al."Near Full-Composition-Range High-Quality GaAsSb Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters Vol.17 No.2(2017):622-630.
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