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	Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy
	Li, LX; Pan, D; Xue, YZ; Wang, XL; Lin, ML; Su, D; Zhang, QL; Yu, XZ; So, H; Wei, DH
刊名	Nano Letters
	2017
卷号	Vol.17 No.2页码:622-630
关键词	bandgap tuning GaAs1−xSbx molecular-beam epitaxy nanowires rectifying behavior self-catalyzed
ISSN号	1530-6984
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6036790
专题	湖南大学
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China 2.Hunan Univ, Key Lab Micronano Phys & Technol Hunan Prov, Sch Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China 3.Hunan Univ, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Li, LX,Pan, D,Xue, YZ,et al. Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy[J]. Nano Letters,2017,Vol.17 No.2:622-630.
APA	Li, LX.,Pan, D.,Xue, YZ.,Wang, XL.,Lin, ML.,...&Wei, DH.(2017).Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy.Nano Letters,Vol.17 No.2,622-630.
MLA	Li, LX,et al."Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy".Nano Letters Vol.17 No.2(2017):622-630.

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