The Raman effects in gamma-LiAlO2 induced by low-energy Ga ion implantation | |
Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Wang, Tie-Jun; Yu, Xiao-Fei; Wang, Xue-Lin | |
2017 | |
会议名称 | 20th International Conference on Ion Beam Modification of Materials (IBMM) |
会议日期 | OCT 30-NOV 04, 2016 |
关键词 | Ion implantation Optical material Raman spectroscopy |
卷号 | 409 |
DOI | 10.1016/j.nimb.2017.05.013 |
页码 | 72-75 |
收录类别 | CPCI-S ; SCIE |
会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6030520 |
专题 | 山东大学 |
作者单位 | 1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, Jinan 250100, Peoples R China. 2.Shandong Univ, Key Lab Particle Phys & Particle |
推荐引用方式 GB/T 7714 | Zhang, Jing,Song, Hong-Lian,Qiao, Mei,et al. The Raman effects in gamma-LiAlO2 induced by low-energy Ga ion implantation[C]. 见:20th International Conference on Ion Beam Modification of Materials (IBMM). OCT 30-NOV 04, 2016. |
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