| Analytical model of energy level alignment at metal-organic interface facilitating hole injection | |
| Shi, Xuewen; Xu, Guangwei; Duan, Xinlv; Lu, Nianduan; Chen, Jiezhi; Li, Ling; Liu, Ming | |
| 2017 | |
| 会议名称 | 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 |
| 会议日期 | 7 September 2017 through 9 September 2017 |
| 关键词 | Electrostatic model Energy level alignment Exponential density of states Metal-organic interface |
| 卷号 | 2017-September |
| DOI | 10.23919/SISPAD.2017.8085305 |
| 页码 | 225-228 |
| 收录类别 | EI ; SCOPUS |
| 会议录 | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6029539 |
| 专题 | 山东大学 |
| 作者单位 | Key Laboratory of Microelectronic Device and Integrated Technology, Insti |
| 推荐引用方式 GB/T 7714 | Shi, Xuewen,Xu, Guangwei,Duan, Xinlv,et al. Analytical model of energy level alignment at metal-organic interface facilitating hole injection[C]. 见:2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. 7 September 2017 through 9 September 2017. |
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